HYM64V1605GU-50 Datasheet, PDF (8/17 Pages) Siemens Semiconductor Group – 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module

HYM 64(72)V1605/45GU-50/-60
16M x 64/72 DRAM Module
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage .............................................................................. –0.5 to min (Vcc+0.5, 4.6) V
Power supply voltage.................................................................................................... –0.5 to 4.6 V
Power dissipation.................................................................................................................. 11.6 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T_A = 0 to 70 °C; V_CC = 3.3 V ± 0.3 V
Parameter
Input high voltage
Input low voltage
Output high voltage (LVTTL)
Output „H“level voltage ( I_OUT = – 2 mA)
Output low voltage (LVTTL)
Output „L“level voltage ( I_OUT = + 2 mA)
Output high voltage (LVCMOS)
Output „H“level voltage ( I_OUT =– 100µA)
Output low voltage (LVCMOS)
Output „L“level voltage ( I_OUT =+100 µA)
Input leakage current
(0 V < V_IN < Vcc, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V < V_OUT < Vcc)
Symbol
x 64/ x72
Unit Notes
min.
max.
V_IH
2.0 Vcc + 0.5 V 1)
V_IL
– 0.5
0.8 V 1)
V_OH
2.4
–
V 1)
V_OL
–
0.4 V 1)
V_OH
Vcc-0.2
–
V 1)
V_OL
–
0.4 V 1)
I_I(L)
– 10
10 µA 1)
I_O(L)
– 10
+10 µA 1)
Semiconductor Group
8