HYB3164405J Datasheet, PDF (9/32 Pages) Siemens Semiconductor Group – 16M x 4-Bit Dynamic RAM

HYB3164(5)405J/T(L)-50/-60
16M x 4-DRAM
AC Characteristics ⁵⁾⁶⁾
T_A = 0 to 70 ˚C,V_CC = 3.3 V ± 0.3V , t_T = 2 ns
Parameter
Symbol
Limit Values
-50
-60
min. max. min. max.
Unit Note
common parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period for HYB3164405
Refresh period for HYB3165405
t_RC
84
t_RP
30
t_RAS
50
t_CAS
8
t_ASR
0
t_RAH
8
t_ASC
0
t_CAH
8
t_RCD
12
t_RAD
10
t_RSH
8
t_CSH
45
t_CRP
5
t_T
1
t_REF
–
t_REF
–
Read Cycle
Access time from RAS
t_RAC
–
Access time from CAS
t_CAC
–
Access time from column address
t_AA
–
OE access time
t_OEA
–
Column address to RAS lead time
t_RAL
25
Read command setup time
t_RCS
0
Read command hold time
t_RCH
0
Read command hold time referenced to t_RRH
0
RAS
–
104
–
40
100k 60
10k 10
–
0
–
10
–
0
–
10
37
14
25
12
10
50
–
5
50
1
128 –
64
–
–
–
100k
10k
–
–
–
–
45
30
–
–
–
50
128
64
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns 7
ms
ms
50
–
60
13
–
15
25
–
30
13
–
15
–
30
–
–
0
–
–
0
–
–
0
–
ns 8, 9
ns 8, 9
ns 8,10
ns
ns
ns
ns 11
ns 11
Semiconductor Group
97