HYB3164405J Datasheet, PDF (10/32 Pages) Siemens Semiconductor Group – 16M x 4-Bit Dynamic RAM

HYB3164(5)405J/T(L)-50/-60
16M x 4-DRAM
AC Characteristics (cont’d) ⁵⁾⁶⁾
T_A = 0 to 70 ˚C,V_CC = 3.3 V ± 0.3V , t_T = 2 ns
Parameter
Symbol
Limit Values
-50
-60
min. max. min. max.
CAS to output in low-Z
t_CLZ
0
–
0
–
Output buffer turn-off delay
t_OFF
0
13
0
15
Output buffer turn-off delay from OE
t_OEZ
0
13
0
15
Data to CAS low delay
t_DZC
0
–
0
–
Data to OE low delay
t_DZO
0
–
0
–
CAS high to data delay
t_CDD
13
–
15
–
OE high to data delay
t_ODD
13
–
15
–
Unit Note
ns 8
ns 12
ns 12
ns 13
ns 13
ns 14
ns 14
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
t_WCH
8
–
10
–
t_WP
7
–
10
–
t_WCS
0
–
0
–
t_RWL
8
–
10
–
t_CWL
8
–
10
–
t_DS
0
–
0
–
t_DH
7
–
10
–
ns
ns
ns 15
ns
ns
ns 16
ns 16
Read-modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE command hold time
t_RWC
t_RWD
t_CWD
t_AWD
t_OEH
111 –
67
–
30
–
42
–
7
–
135 –
79
–
34
–
49
–
10
–
ns
ns 15
ns 15
ns 15
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle time
t_HPC
20
CAS precharge time
t_CP
8
Access time from CAS precharge
t_CPA
–
Output data hold time
t_COH
5
RAS pulse width in hyper page mode t_RAS
50
–
25
–
10
27
–
–
5
200k 60
–
–
35
–
200k
ns
ns
ns 7
ns
ns
Semiconductor Group
98