HYB3164405J Datasheet, PDF (2/32 Pages) Siemens Semiconductor Group – 16M x 4-Bit Dynamic RAM

HYB3164(5)405J/T(L)-50/-60
16M x 4-DRAM
This HYB3164(5)405 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is
fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process
technology. The circuit and process design allow this device to achieve high performance and low
power dissipation. The HYB3164(5)405 operates with a single 3.3 +/-0.3V power supply and
interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB
3164(5)400J/T to be packaged in a 500mil wide SOJ-34 or TSOP-34 plastic package. These
packages provide high system bit densities and are compatible with commonly used automatic
testing and insertion equipment.The HYB3164(5)405TL parts have a very low power „sleep mode“
supported by Self Refresh.
Ordering Information
Type
Ordering
Code
HYB 3164405J-50 on request
HYB 3164405J-60 on request
HYB 3164405T-50 on request
HYB 3164405T-60 on request
HYB 3164405TL-50 on request
HYB 3164405TL-60 on request
HYB 3165405J-50 on request
HYB 3165405J-60 on request
HYB 3165405T-50 on request
HYB 3165405T-60 on request
HYB 3165405TL-50 on request
HYB 3165405TL-60 on request
Package
Descriptions
P-SOJ-34-1
P-SOJ-34-1
P-TSOPII-34-1
P-TSOPII-34-1
P-TSOPII-34-1
P-TSOPII-34-1
P-SOJ-34-1
P-SOJ-34-1
P-TSOPII-34-1
P-TSOPII-34-1
P-TSOPII-34-1
P-TSOPII-34-1
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
Pin Names
A0-A12
A0-A11
RAS
OE
I/O1-I/O4
CAS
WRITE
Vcc
Vss
Address Inputs for HYB 3164405J/T(L)
Address Inputs for HYB 3165405J/T(L)
Row Address Strobe
Output Enable
Data Input/Output
Column Address Strobe
Read/Write Input
Power Supply ( + 3.3V)
Ground
Semiconductor Group
90