HYB314171BJ-50- Datasheet, PDF (9/24 Pages) Siemens Semiconductor Group – 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh

HYB 314171BJ/BJL-50/-60/-70
3.3V 256 K x 16-DRAM
Parameter
Symbol
Limit Values
Unit Note
-50
- 60
- 70
min. max. min. max. min. max.
Fast Page Mode Read Modify Write Cycle
Fast page mode read/write cycle t_PRWC 80 –
90 –
100 –
ns
time
CAS precharge to WE delay time t_CPWD 55 –
60 –
65 –
ns
CAS before RAS refresh Cycle
CAS setup time
CAS hold tim
RAS to CAS precharge time
Write to RAS precharge time
Write to RAS hold time
t_CSR
5
–
5
–
5
–
ns
t_CHR
10 –
10 –
10 –
ns
t_RPC
0
–
0
–
0
–
ns
t_WRP
10 –
10 –
10 –
ns
t_WRH
10 –
10 –
10 –
ns
CAS-before RAS counter test cycle
CAS precharge time
t_CPT
25 –
30 –
40 –
ns
Self Refresh Cycle (L-Version only)
RAS pulse width
RAS precharge time
CAS hold time Self Refresh
t_RASS
100 –
100 –
100 –
µs
t_RPS
95 –
110 –
130 –
ns
t_CHS
35 –
40 –
50 –
ns
Semiconductor Group
9