TLE5216G Datasheet, PDF (8/17 Pages) Siemens Semiconductor Group – Smart Quad Channel Low-Side Switch

TLE 5216 G
Electrical Characteristics
V_S = 6 V to 18 V; T_j = – 40 °C to 150 °C (unless otherwise specified)
Parameter
Symbol
Limit Values Unit
min. typ. max.
Power Supply (V_S)
Supply current
Outputs ON I_S
Outputs OFF I_S
3.5 8 mA
8
15 mA
Power Outputs
ON state resistance
T_j = 25 °C; I_D = 2 A; all V_DS > 0 V R_DS(ON)
T_j = 125 °C; I_D = 1.5 A; t > 100 µs R_DS(ON)
Clamping voltage (OUT1 - OUT4)
I_D = 1 A; 0 < T_j < 125 °C; all V_DS > 0 V V_DS(AZ)
Negative clamping voltage
T_j = 25 °C; I_D = – 0.3 A V_DS(AZ)
Current limitation
T_j = 0 °C; V_DS = V_{DS (OV)} I_D(lim)
T_j = 25 °C; V_DS = V_{DS (OV)} I_D(lim)
T_j = 125 °C; V_DS = V_{DS (OV)} I_D(lim)
Leakage current
V_S = 0 V; V_DS = 12 V; all V_DS > 0 V I_R
0.35 0.4 Ω
0.55 0.63 Ω
65 70 75 V
–1
3.0 3.6
2.8 3.3
2.25 2.6
– 0.5 V
4.2 A
3.8 A
2.95 A
0.2 0.5 mA
Digital Inputs
Inputs IN1 … IN4, CS, SERIN
Input LOW current
Input HIGH current
Input hysteresis
0 V < V_IN < 2 V I_INL
V_IN = 5 V I_INH
V_INHys
– 200 – 100 – 50 µA
– 20 0
5 µA
0.5 0.6
V
Input Clock (CLK)
Input current
Input hysteresis
0 V < V_INCLK < 5 V I_INCLK
– 20 2
5 µA
V_INCLKHys
0.5
0.7
V
Semiconductor Group
8
1998-06-22