TLE5216G Datasheet, PDF (14/17 Pages) Siemens Semiconductor Group – Smart Quad Channel Low-Side Switch

TLE 5216 G
Thermal Resistance for P-DSO-20-10
10 ¹
K/W
Z _th
10 ⁰
5
10^-1
5
1 Switch
2 Switches
4 Switches
AED01893
10^-2
10^-2
5 10^-1
5 10 ⁰
5 10¹
Pulse width (square)
ms 10 ²
Note: Thermal resistance is measured at T_C = 25 °C and T_jpeak = 45 °C. Multiple switches
are equally loaded at the same time.
Tj1
0.4 K/W
0.8 K/W
1.4 K/W
2.4 K/W
P_V1 (W)
Tj2
0.2
mJ/K
0.4 K/W
0.6
mJ/K
0.8 K/W
0.8
mJ/K
1 K/W
1.4 K/W
2 mJ/K
2.4 K/W
P_V2 (W)
0.2
0.6
0.8
mJ/K
mJ/K
mJ/K
Tj3
0.4 K/W
0.8 K/W
2 mJ/K
1.4 K/W
15 15
K/W K/W
2.4 K/W
P_V3 (W)
Tj4
0.2
mJ/K
0.4 K/W
0.6
mJ/K
0.8 K/W
0.8
mJ/K _{1 K/W}
1.4 K/W
2 mJ/K
2.4 K/W
0.75 K/W
P_V4 (W)
0.2
0.6
0.8
mJ/K
mJ/K
mJ/K
2 mJ/K
100
mJ/K
T_C (K)
AES01895
Figure 8
Thermal Equivalent Circuit for P-DSO-20-10
Note: Thermal equivalent circuit is valid at T_C = 25 °C and 25 °C < T_j < 45 °C. At
T_C = 110 °C and 110 °C < T_j < 130 °C, Z_th is 15 % higher. For high power transients
with T_{j max} – T_C ≤ 100 K add 25 % headroom for thermal non-uniformity.
Semiconductor Group
14
1998-06-22