HYM322030S-GS50 Datasheet, PDF (8/10 Pages) Siemens Semiconductor Group – 2M x 32-Bit Dynamic RAM Module

HYM 322030S/GS-50/-60/-70
2M × 32-Bit
AC Characteristics (cont’d) ⁵⁾⁶⁾
16F
T_A = 0 to 70 °C,V_CC = 5 V ± 10 %, t_T = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
Early Write Cycle
Write command hold time
t_WCH
Write command pulse width
t_WP
Write command setup time
t_WCS
Write command to RAS lead time t_RWL
Write command to CAS lead time t_CWL
Data setup time
t_DS
Data hold time
t_DH
8
–
8
–
0
–
13 –
13 –
0
–
10 –
10 –
10 –
0
–
15 –
15 –
0
–
10 –
10 –
10 –
0
–
20 –
20 –
0
–
15 –
ns
ns
ns 15
ns
ns
ns 16
ns 16
Fast Page Mode Cycle
Fast page mode cycle time
t_PC
35
CAS precharge time
t_CP
10
Access time from CAS precharge t_CPA
–
RAS pulse width
t_RAS
50
CAS precharge to RAS Delay
t_RHPC 30
–
40
–
10
30 –
200k 60
–
35
–
45
–
10
35 –
200k 70
–
40
–
ns
–
ns
40 ns 7
200k ns
–
ns
CAS-before-RAS Refresh Cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
t_CSR
10 –
10 –
10 –
ns
t_CHR
10 –
10 –
10 –
ns
t_RPC
5
–
5
–
5
–
ns
t_WRP
10 –
10 –
10 –
ns
Semiconductor Group
8