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HYM322030S-GS50 Datasheet, PDF (1/10 Pages) Siemens Semiconductor Group – 2M x 32-Bit Dynamic RAM Module | |||
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2M x 32-Bit Dynamic RAM Module
HYM 322030S/GS-50/-60/-70
Advanced Information
⢠2 097 152 words by 32-bit organization
⢠1 memory bank
⢠Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
⢠Fast page mode capability
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
⢠Single + 5 V (± 10 %) supply
⢠Low power dissipation
max. 2640 mW active (-50 version)
max. 2420 mW active (-60 version)
max. 2200 mW active (-70 version)
CMOS â 22 mW standby
TTL â44 mW standby
⢠CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
⢠4 decoupling capacitors mounted on substrate
⢠All inputs, outputs and clocks fully TTL compatible
⢠72 pin Single in-Line Memory Module (L-SIM-72-9 ) with 20.32 mm (800 mil) height
⢠Utilizes four 2M à 8 -DRAMs in 400 mil SOJ packages
⢠2048 refresh cycles / 32 ms with 11/10 addressing
⢠Optimized for use in byte-write non-parity applications
⢠Tin-Lead contact pads (S-version)
⢠Gold contact pads (GS - version)
Semicuonductor Group
1
9.95
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