HYB5116400BJ-50- Datasheet, PDF (8/26 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM

HYB 5116400BJ/BT-50/-60/-70
4M x 4-DRAM
AC Characteristics (cont’d) ⁵⁾⁶⁾
16F
T_A = 0 to 70 °C,V_CC = 5 V ± 10 %, t_T = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
Output buffer turn-off delay from t_OEZ
0
13 0
15 0
20 ns 12
OE
Data to OE low delay
CAS high to data delay
OE high to data delay
t_DZO
t_CDD
t_ODD
0
–
13 –
13 –
0–
15 –
15 –
0
–
20 –
20 –
ns 13
ns 14
ns 14
Write Cycle
Write command hold time
t_WCH
Write command pulse width
t_WP
Write command setup time
t_WCS
Write command to RAS lead time t_RWL
Write command to CAS lead time t_CWL
Data setup time
t_DS
Data hold time
t_DH
Data to CAS low delay
t_DZC
8
–
8
–
0
–
13 –
13 –
0
–
10 –
0
–
10 –
10 –
0–
15 –
15 –
0–
10 –
0–
10 –
10 –
0
–
20 –
20 –
0
–
15 –
0
–
ns
ns
ns 15
ns
ns
ns 16
ns 16
ns 13
Read-Modify-Write Cycle
Read-write cycle time
t_RWC
RAS to WE delay time
t_RWD
CAS to WE delay time
t_CWD
Column address to WE delay time t_AWD
OE command hold time
t_OEH
126 –
68 –
31 –
43 –
13 –
150 –
80 –
35 –
50 –
15 –
180 –
95 –
45 –
60 –
20 –
ns
ns 15
ns 15
ns 15
ns
Fast Page Mode Cycle
Fast page mode cycle time
t_PC
35
CAS precharge time
t_CP
10
Access time from CAS precharge t_CPA
–
RAS pulse width
t_RAS
50
CAS precharge to RAS Delay
t_RHPC 30
– 40
– 10
30 –
200k 60
– 35
–
45
–
10
35 –
200k 70
–
40
– ns
– ns
40 ns 7
200k ns
– ns
Semiconductor Group
8