HYB5116400BJ-50- Datasheet, PDF (13/26 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM

HYB 5116400BJ/BT-50/-60/-70
4M x 4-DRAM
V
RAS
IH
VIL
V
IH
CAS
VIL
V
IH
Address _VIL
V
IH
WE
VIL
V
IH
OE
VIL
V
I/O
IH
(Inputs) _VIL
V
I/O
OH
(Outputs) _VOL
tRC
tRAS
tRP
tASR
tCSH
tRCD
tRSH
tCAS
tRAD
tASC
tRAL
tCAH
Row
t_RAH
Column
tCWL
tRWL
tWP
tCRP
tASR
.
Row
tOEH
tDZO
tDZC
tODD
tDS
tDH
tOEZ
tCLZ
tOEA
Hi-Z
Valid Data
Hi-Z
“H” or “L”
WL3
Write Cycle (OE Controlled Write)
Semiconductor Group
13