HYB3164800AJ Datasheet, PDF (8/26 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

HYB3164(5)800AJ/AT(L)-40/-50/-60
8M x 8-DRAM
DC-Characteristics (cont’d)
T_A = 0 to 70 °C, V_SS = 0 V, V_CC = 3.3 V ± 0.3 V
Parameter
Symbol refresh version Unit Note
4k
8k
Operating Current
I_CC1
-40 ns version
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
155
110
mA 2) 3) 4)
130
90
mA
105
75
mA
Standby Current
(RAS=CAS= Vih)
I_CC2
2
2
mA –
RASOnly Refresh Current:
-
I_CC3
-40 ns version
-50ns version
-60 ns version
(RAS cycling: CAS = VIH: tRC = tRC min.)
155
110
mA 2) 4)
130
90
mA
105
75
mA
Fast Page Mode Current:
I_CC4
-40 ns version
-50 ns version
-60 ns version
(RAS = V_IL, CAS, address cycling: tPC=tPC min.)
Standby Current
I_CC5
(RAS=CAS= Vcc-0.2V)
70
70
mA 2) 3) 4)
60
60
mA
50
50
mA
900
900
µA –
Standby Current (L-Version)
(RAS=CAS= Vcc-0.2V)
I_CC5
200
200
µA –
CAS Before RAS Refresh Current
I_CC6
-40 ns version
155
155 mA 2) 4)
-50 ns version
130
130 mA
-60 ns version
105
105 mA
(RAS, CAS cycling: tRC = tRC min.)
Self Refresh Current (L-version only)
I_CC7
400
400
µA
(CBR cycle with tRAS>TRASSmin, CAS held low,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
Semiconductor Group
8