HYB3164800AJ Datasheet, PDF (1/26 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

8M x 8-Bit Dynamic RAM
( 4k & 8k Refresh)
HYB 3164800AJ/AT(L) -40/-50/-60
HYB 3165800AJ/AT(L) -40/-50/-60
Advanced Information
• 8 388 608 words by 8-bit organization
• 0 to 70 °C operating temperature
• Fast Page Mode operation
• Performance:
-40 -50 -60
t_RAC RAS access time
40
50
60
ns
t_CAC CAS access time
10
13
15
ns
t_AA Access time from address 20
25
30
ns
t_RC Read/write cycle time
75
90
110 ns
t_PC Fast page mode cycle time 30
35
40
ns
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
max. 396 mW active ( HYB 3164800AJ/AT(L) -40)
max. 324 mW active ( HYB 3164800AJ/AT(L) -50)
max. 270 mW active ( HYB 3164800AJ/AT(L) -60)
max. 558 mW active ( HYB 3165800AJ/AT(L) -40)
max. 468 mW active ( HYB 3165800AJ/AT(L) -50)
max. 378 mW active ( HYB 3165800AJ/AT(L) -60)
7.2 mW standby (LVTTL)
3.24 mW standby (LVCMOS)
720 µW standby for L-versions
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh (L-version only)
• 8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164800AJ/AT)
4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165800AJ/AT)
• 256 msec refresh period for L-versions
• Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)800AJ
P-TSOPII-32-1 400 mil HYB 3164(5)800AT(L)
Semiconductor Group
1
6.97