HYB3164800AJ Datasheet, PDF (2/26 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

HYB3164(5)800AJ/AT(L)-40/-50/-60
8M x 8-DRAM
This device is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an
advanced second generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit
and process design allow this device to achieve high performance and low power dissipation. This
DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or
LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)800AJ/AT to be packaged in a
400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit
densities and are compatible with commonly used automatic testing and insertion equipment. The
HYB3164(5)800ATL parts (L-versions) have a very low power „sleep mode“ supported by Self
Refresh
Ordering Information
Type
HYB 3164800AJ-40
HYB 3164800AJ-50
HYB 3164800AJ-60
HYB 3164800AT-40
HYB 3164800AT-50
HYB 3164800AT-60
HYB 3165800AJ-40
HYB 3165800AJ-50
HYB 3165800AJ-60
HYB 3165800AT-40
HYB 3165800AT-50
HYB 3165800AT-60
HYB 3164(5)800ATL
Ordering
Code
Package
Descriptions
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
Low Power DRAMs
Pin Names
A0-A12
A0-A11
RAS
OE
I/O1-I/O8
CAS
WE
Vcc
Vss
Address Inputs for 8k-refresh versions HYB 3164800AJ/AT(L)
Address Inputs for 4k-refresh versions HYB 3165800AJ/AT(L)
Row Address Strobe
Output Enable
Data Input/Output
Column Address Strobe
Read/Write Input
Power Supply ( + 3.3V)
Ground
Semiconductor Group
2