SDA2506-5 Datasheet, PDF (7/10 Pages) Siemens Semiconductor Group – Nonvolatile Memory 1-Kbit E2PROM

SDA 2506-5
Characteristics
T_A = 25 ˚C
Parameter
Supply voltage
Supply current
Symbol
V_CC
I_CC
Limit Values
min. typ. max.
4.75 5
5.25
3
Unit Test Condition
V
mA V_CC = 5.25 V
Inputs
Input voltage (D, Φ, CE)
Input voltage (D, Φ, CE)
Input current (D, Φ, CE)
V_L
V_H
2.4
I_H
0.8 V
V
10
µA V_H = 5.25 V
Data Output D (open drain)
L-output current
I_L
H-output current
I_H
0.5 µA V_L = 0.8 V
10
µA V_H = 5.25 V
Clock Pulse Φ
High duration
t_H
2.5
Low duration
t_L
5
Time between rising
∆t
2.5
and falling edge CE to D
Time between rising
t_CE
5
and falling edge CE to Φ
Data hold (before/after
Φ falling edge)
t_HD
2.5
Data delay (after Φ falling
t_DD
2.5
edge)
Rise time
Fall time
Erase time
Write time
Total erase
t_R
t_F
t_ER
10
t_WR
10
t_GL
60
µs
µs
µs
µs
µs
µs
1
µs
1
µs
20
ms
20
ms
20
ms
Semiconductor Group
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