HYB3116160BSJ Datasheet, PDF (7/25 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh

HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
DC Characteristics (values in brackets for HYB3116160BSJ) (cont’d)
T_A = 0 to 70 °C, V_SS = 0 V, V_CC = 3.3 V ± 0.3 V, t_T = 5 ns
Parameter
Symbol Limit Values
min.
max.
Unit Test
Condition
Average V_CC supply current, during RAS-only I_CC3
refresh cycles:
-50 ns version
–
-60 ns version
–
-70 ns version
–
200(100) mA ^{2) 4)}
180 (90) mA ^{2) 4)}
160 (80) mA ^{2) 4)}
(RAS cycling: CAS = V_IH, t_RC = t_RC min.)
Average V_CC supply current,
I_CC4
during fast page mode: -50 ns version
–
-60 ns version
–
-70 ns version
–
55 (40)
50 (35)
45 (30)
mA ^{2) 3) 4)}
mA ^{2) 3) 4)}
mA ^{2) 3) 4)}
(RAS = V_IL, CAS, address cycling, t_PC = t_PC min.)
Standby V_CC supply current
(RAS = CAS = V_CC – 0.2 V)
I_CC5
–
Standby V_CC supply current (L-version)
(RAS = CAS = V_CC – 0.2 V)
I_CC5
–
Average V_CC supply current, during CAS-
I_CC6
before-RAS refresh mode: -50 ns version
–
-60 ns version
–
-70 ns version
–
1
mA ¹⁾
200
µA ¹⁾
200(100) mA ^{2) 4)}
180 (90) mA ^{2) 4)}
160 (80) mA ^{2) 4)}
(RAS, CAS cycling, t_RC = t_RC min.)
Average Self Refresh Current
I_CC7
_
(CBR cycle with tRAS>TRASSmin., CAS held low,
WE=Vcc-0.2V, Address and Din=Vcc--0.2V or 0.2V)
1
mA
250
µA L-version
Capacitance
T_A = 0 to 70 °C,V_CC = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Input capacitance (A0 to A11)
C_I1
Input capacitance (RAS, UCAS, LCAS, WE, OE) C_I2
I/O capacitance (I/O1-I/O16)
C_IO
Limit Values
min.
max.
–
5
–
7
–
7
Unit
pF
pF
pF
Semiconductor Group
7