HYB3116160BSJ Datasheet, PDF (1/25 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh

1M x 16-Bit Dynamic RAM
(1k & 4k -Refresh)
HYB3116160BSJ/BST(L)-50/-60/-70
HYB3118160BSJ/BST(L)-50/-60/-70
Advanced Information
• 1 048 576 words by 16-bit organization
• 0 to 70 °C operating temperature
• Performance:
t_RAC
t_CAC
t_AA
t_RC
t_PC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
90 110 130 ns
35 40 45 ns
• Single + 3.3 V (± 0.3 V) supply
• Low power dissipation
max. 720 active mW ( HYB3118160BSJ/BST-50)
max. 648 active mW ( HYB3118160BSJ/BST-60)
max. 576 active mW ( HYB3118160BSJ/BST-70)
max. 360 active mW ( HYB3116160BSJ/BST-50)
max. 324 active mW ( HYB3116160BSJ/BST-60)
max. 288 active mW ( HYB3116160BSJ/BST-70)
7.2 mW standby (LV-TTL)
3.6 mW standby (LV-CMOS)
720 µW standby for L-version
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh
• Fast page mode capability
• 2 CAS / 1 WE
• All inputs, outputs and clocks fully LV-TTL-compatible
• 1024 refresh cycles / 16 ms for HYB 3118160BSJ
• 4096 refresh cycles / 64 ms for HYB 3116160BSJ
• Plastic Package:
P-SOJ-42-1 400 mil
P-TSOPII-50/44-1 400mil
Semiconductor Group
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