HYB3116160BSJ Datasheet, PDF (3/25 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh

HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
Vcc
I/O1
I/O2
I/O3
I/O4
Vcc
I/O5
I/O6
I/O7
I/O8
N.C.
N.C.
WE
RAS
A11/NC
A10/NC
A0
A1
A2
A3
Vcc
P-SOJ-42 (400 mil)
1
42 Vss
Vcc
I/O1
2
41 I/O16 _I/O2
3
40 I/O15 I/O3
4
39 I/O14 ^I/O4
5
38 I/O13 ^Vcc
6
7
37 Vss
36 I/O12
I/O5
I/O6
I/O7
8
35 I/O11 _I/O8
9
34 I/O10 N.C.
10
33 I/O9
11
32 N.C.
12
31 LCAS
13
14
30
29
UCAS
OE
N.C.
N.C.
WE
15
28 A9
RAS
16
27 A8 A11/N.C.
17
26 A7 ^A10.N.C.
18
25 A6
A0
19
20
24 A5
23 A4
A1
A2
A3
21
22 Vss
Vcc
P-TSOPII-50/44 (400mil)
1
50
2
49
3
48
4
47
5
46
6
45
7
44
8
43
9
42
10
41
11
40
15
36
16
35
17
34
18
33
19
32
20
31
21
30
22
29
23
28
24
27
25
26
Vss
I/O16
I/O15
I/O14
I/O13
Vss
I/O12
I/O11
I/O10
I/O9
N.C.
N.C.
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
Vss
*) A11 and A10 are not connected for HYB3118160BSJ/BST (1k-refresh version)
Truth Table
RAS LCAS UCAS WE OE
H
H
H
H
H
I/O1-I/O8
High-Z
I/O9-I/O16
High-Z
Operation
Standby
L
H
H
H
H
High-Z
High-Z
Refresh
L
L
H
H
L
Dout
High-Z
Lower byte read
L
H
L
H
L
High-Z
Dout
Upper byte read
L
L
L
H
L
Dout
Dout
Word read
L
L
H
L
H
Din
Don't care Lower byte write
L
H
L
L
H
Don't care Din
Upper byte write
L
L
L
L
H
Din
Din
Word write
L
L
L
H
H
High-Z
High-Z
NOP
Semiconductor Group
3