BFR183 Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

BFR 183
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
18
I_C=15mA
dB
G
14
0.9GHz
0.9GHZ
12
1.8GHz
10
1.8GHz
8
6
4
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
V_CE = Parameter
32
dB ^IC=15mA
28
G 26
24
22
20
18
16
14
12
10
8
10V
6
1V
0.7V
4
2
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
32
dBm
8V
28
IP₃
5V
26
24
22
3V
20
2V
18
16
14
1V
12
10
8
0 5 10 15 20 25 30 mA 40
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
30
dB ^IC=15mA
26
S₂₁ 24
22
20
18
16
14
12
10
8
6
10V
4
1V
2
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-11-1996