BFR183 Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector current from 2 mA to 30mA
• f_T = 8 GHz
F = 1.2 dB at 900 MHz
BFR 183
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 183 RHs
Q62702-F1316
1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S ≤ 60 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ¹⁾
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
1) T_S is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
65
5
450
150
- 65 ... + 150
- 65 ... + 150
≤ 200
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-11-1996