BFR183 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

BFR 183
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
1.1
pF
C_cb ^0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
20
dB
G
16
10V
3V
14
2V
12
10
1V
8
0.7V
6
0 5 10 15 20 25 30 35 mA 45
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
9
GHz
10V
f_T
7
5V
6
3V
5
2V
4
3
1V
0.7V
2
1
0
0 5 10 15 20 25 30 35 mA 45
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
12
10V
dB
G
3V
2V
8
6
1V
4
0.7V
2
0
0 5 10 15 20 25 30 35 mA 45
I_C
Semiconductor Group
6
Dec-11-1996