BFP420 Datasheet, PDF (7/8 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)

BFP 420
Power gain G_ma, G_ms, |S₂₁|² = f ( f )
V_CE = 2V, I_C = 20 mA
44
dB
36
G ₃₂
28
G_ms
24
20
16
|S₂₁|²
12
G_ma
8
4
0
0.0
1.0
2.0
3.0
4.0 GHz
6.0
f
Power gain G_ma, G_ms = f (I_C)
V_CE = 2V
f = parameter in GHz
30
dB
0.9
24
G ₂₂
1.8
20
18
2.4
16
3
14
4
12
5
10
6
8
6
4
2
0
0
4
8 12 16 20 24 28 32 mA 40
I_C
Power gain G_ma, G_ms = f (V_CE)
I_C = 20 mA
f = parameter in GHz
30
dB
0.9
24
G ₂₂
1.8
20
2.4
18
16
3
14
4
12
5
10
6
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
4.5
V_CE
Collector-base capacitance C_cb = f (V_CB)
V_BE = 0, f = 1MHz
0.30
pF
C_cb
0.20
0.15
0.10
0.05
0.00
0
1
2
V
4
V_CB
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