BFP420 Datasheet, PDF (2/8 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)

BFP 420
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-base cutoff current
V_CB = 5 V, I_E = 0
Emitter-base cutoff current
V_EB = 1.5 V, I_C = 0
DC current gain
I_C = 20 mA, V_CE = 4 V
AC characteristics
Transition frequency
I_C = 30 mA, V_CE = 3 V, f = 2 GHz
Collector-base capacitance
V_CB = 2 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 2 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
I_C = 5 mA, V_CE = 2 V, Z_S = Z_Sopt ,
f = 1.8 GHz
Power gain ¹⁾
I_C = 20 mA, V_CE = 2 V, Z_S = Z_Sopt , Z_L = Z_Lopt ,
f = 1.8 GHz
Insertion power gain
I_C = 20 mA, V_CE = 2 V, f = 1.8 GHz,
Z_S = Z_L = 50Ω
Third order intersept point
I_C = 20 mA, V_CE = 2 V, Z_S=Z_Sopt , Z_L=Z_Lopt ,
f = 1.8 GHz
1dB Compression point
I_C = 20 mA, V_CE = 2 V, f = 1.8 GHz,
Z_S=Z_Sopt , Z_L=Z_Lopt
V_(BR)CEO ^4.5
I_CBO
-
I_EBO
-
h_FE
50
f_T
20
C_cb
-
C_ce
-
C_eb
-
F
-
G_ms
-
|S₂₁|²
14
IP₃
-
P_-1dB
-
5 6.5 V
- 200 nA
-
35 µA
80 150 _-
25
- GHz
0.15 0.24 pF
0.41 -
0.55 -
1.05 1.4 dB
20
-
17
- dB
22
- dBm
12
-
1) G_ms = |S₂₁ / S_12|
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