BFP420 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)

NPN Silicon RF Transistor
• For high gain low noise amplifiers
• For oscillators up to 10 GHz
• Noise figure F = 1.05 dB at 1.8 GHz
outstanding G_ms = 20 dB at 1.8 GHz
• Transition frequency f_T = 25 GHz
• Gold metalization for high reliability
• SIEGET ^® 25 - Line
Siemens Grounded Emitter Transistor
25 GHz f_T - Line
SIEGET^®25 BFP 420
3
4
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
BFP 420 AMs
Q62702-F1591
Pin Configuration
1=B 2=E 3=C
4=E
Package
SOT-343
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, T_S ≤ 107 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ¹⁾
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
Value
Unit
4.5
V
15
1.5
35
mA
3
160
mW
150
°C
-65 ...+150
-65 ...+150
≤ 270
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
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