BFP181 Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

BFP 181
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
22
I_C=5mA
dB
G
18
16
0.9GHz
0.9GHz
1.8GHz
14
12
1.8GHz
10
8
6
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
V_CE = Parameter
34
dB ^I_C^=5mA
30
G 28
26
24
22
20
18
16
14
12
10
10V
2V
8
1V
0.7V
6
4
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
22
dBm
8V
18
IP_{3 16}
5V
14
3V
12
10
2V
8
6
4
1V
2
0
-2
-4
0 2 4 6 8 10 12 14 mA 18
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
24
I_C=5mA
dB
S₂₁ ²⁰
18
16
14
12
10
8
10V
6
2V
1V
4
0.7V
2
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-11-1996