BFP181 Datasheet, PDF (3/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

BFP 181
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
AC Characteristics
Transition frequency
I_C = 10 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 10 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
I_C = 2 mA, V_CE = 8 V, Z_S = Z_Sopt
f = 900 MHz
f = 1.8 GHz
Power gain ¹⁾
I_C = 5 mA, V_CE = 8 V, Z_S = Z_Sopt
Z_L = Z_Lopt
f = 900 MHz
f = 1.8 GHz
Transducer gain
I_C = 5 mA, V_CE = 8 V, Z_S =Z_L= 50 Ω
f = 900 MHz
f = 1.8 GHz
f_T
6
C_cb
-
C_ce
-
C_eb
-
F
-
-
G_ms
-
-
|S_21e|²
-
-
8
0.21
0.27
0.32
1.45
1.8
20
16.5
16.5
11.5
max.
-
0.4
-
-
-
-
-
-
-
-
1) G_ms = |S₂₁/S₁₂|
Unit
GHz
pF
dB
Semiconductor Group
3
Dec-11-1996