BFP181 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

BFP 181
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.32
pF
C_cb
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
24
dB
10V
5V
G
20
3V
18
2V
16
14
1V
12
0.7V
10
8
0 2 4 6 8 10 12 14 mA 18
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
10.0
GHz
10V
f_T ^8.0
8V
7.0
5V
6.0
3V
5.0
2V
4.0
3.0
1V
0.7V
2.0
1.0
0.0
0 2 4 6 8 10 12 14 mA 17
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
18
dB
10V
G
14
5V
3V
12
2V
10
8
1V
6
0.7V
4
2
0
0 2 4 6 8 10 12 14 mA 18
I_C
Semiconductor Group
6
Dec-11-1996