HYM362140S Datasheet, PDF (6/9 Pages) Siemens Semiconductor Group – 2M x 36-Bit Dynamic RAM Module

HYM 362140S/GS-60/-70
2M x 36-Bit
DC Characteristics¹⁾ (cont’d)
Parameter
Symbol
Average V_CC supply current
I_CC4
during fast page mode
(RAS = V_IL, CAS, address cycling,
t_PC = t_PC min)
-60 version
-70 version
Limit Values
min.
max.
–
864
–
744
Standby V_CC supply current
(RAS = CAS = V_CC – 0.2 V)
I_CC5
–
Average V_CC supply current
I_CC6
during CAS-before-RAS refresh mode
(RAS, CAS cycling, t_RC = t_RC min)
-60 version
–
-70 version
–
24
1264
1144
Unit Test
Condition
mA ²⁾
mA ³⁾
mA
mA ²⁾
mA
Capacitance
T_A = 0 to 70 ˚C, V_CC = 5 V ± 10 %, f = 1 MHz
Parameter
Symbol
Limit Values Unit
min.
max.
Input capacitance
(A0 to A9, WE)
C_I1
–
180
pF
Input capacitance
(RAS0-RAS3, CAS0-CAS3)
C_I2
–
45
pF
I/O capacitance
C_IO1
–
(DQ0-DQ7, DQ9-DQ16, DQ18-DQ25, DQ27-DQ34)
25
pF
I/O capacitance
(DQ8, DQ17, DQ26, DQ35)
C_IO2
–
35
pF
Semiconductor Group
606