HYM362140S Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – 2M x 36-Bit Dynamic RAM Module

HYM 362140S/GS-60/-70
2M x 36-Bit
The HYM 362140S/GS-60/-70 is a 8 M Byte DRAM module organized as 2 097 152 words by
36-bit in a 72-pin single-in-line package comprising eight HYB 511000BJ 1M × 1 DRAMs and
sixteen HYB 514400BJ 1M × 4 DRAMs in 300 mil wide SOJ-packages mounted together with
twelve 0.2 µF ceramic decoupling capacitors on a PC board.
The HYM 362140S/GS-60/-70 can also be used as a 4 194 304 words by 18-bits dynamic RAM
module by means of connecting DQ0 and DQ18, DQ1 and DQ19, DQ2 and DQ20, …, DQ17 and
DQ35, respectively.
Each HYB 511000BJ and HYB 514400BJ is described in the data sheet and is fully electrical tested
and processed according to SIEMENS standard quality procedure prior to module assembly. After
assembly onto the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 362140S/GS-60/-70 dictates the use of early write cycles.
Pin Definitions and Functions
Pin No.
A0-A9
DQ0-DQ35
CAS0 - CAS3
RAS0 - RAS3
WE
V_CC
V_SS
PD
N.C.
Function
Address Inputs
Data Input/Output
Column Address Strobe
Row Address Strobe
Read/Write Input
Power (+ 5 V)
Ground
Presence Detect Pin
No Connection
Presence Detect Pins
PD0
PD1
PD2
PD3
-60
N.C.
N.C.
N.C.
N.C.
-70
N.C.
N.C.
V_SS
N.C.
Semiconductor Group
602