HYM322160S Datasheet, PDF (6/9 Pages) Siemens Semiconductor Group – 2M x 32-Bit Dynamic RAM Module

HYM 322160S/GS-60/-70
2M x 32-Bit
DC Characteristics¹⁾ (cont’d)
Parameter
Symbol
Average V_CC supply current
I_CC4
during fast page mode
(RAS = V_IL, CAS, address cycling,
t_PC = t_PC min)
-60 version
-70 version
Limit Values
min.
max.
–
560
–
560
Standby V_CC supply current
(RAS = CAS = V_CC – 0.2 V)
I_CC5
–
16
Average V_CC supply current
I_CC6
during CAS-before-RAS refresh mode
(RAS, CAS cycling, t_RC = t_RC min)
-60 version
–
880
-70 version
–
800
Unit Test
Condition
mA ²⁾,
mA ³⁾
mA
mA ²⁾
mA
Capacitance
T_A = 0 to 70 ˚C, V_CC = 5 V ± 10 %, f = 1 MHz
Parameter
Input capacitance
(A0 to A9, WE)
Input capacitance
(RAS0-RAS2, CAS0-CAS3)
I/O capacitance
(DQ0-DQ31)
Symbol
C_I1
Limit Values
min.
max.
–
120
C_I2
–
40
C_IO1
–
29
Unit
pF
pF
pF
Semiconductor Group
556