HYM322160S Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – 2M x 32-Bit Dynamic RAM Module

HYM 322160S/GS-60/-70
2M x 32-Bit
The HYM322160S/GS-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by
32-Bit in a 72-pin single-in-line package comprising sixteen HYB514400BJ 1M × 4 DRAMs in 300
mil wide SOJ-packages mounted together with eight 0.2 µF ceramic decoupling capacitors on a PC
board.
The HYM322160S/GS-60/-70 can also be used as a 4 194 304 words by 16-Bits dynamic RAM
module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, …, DQ15 and
DQ31, respectively.
Each HYB514400BJ is described in the data sheet and is fully electrical tested and processed
according to SIEMENS standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 322160S/GS-60/-70 dictates the use of early write cycles.
Pin Definitions and Functions
Pin No.
A0-A9
DQ0-DQ31
CAS0 - CAS3
RAS0 - RAS3
WE
V_CC
V_SS
PD
N.C.
Function
Address Inputs
Data Input/Output
Column Address Strobe
Row Address Strobe
Read/Write Input
Power (+ 5 V)
Ground
Presence Detect Pin
No Connection
Presence Detect Pins
PD0
PD1
PD2
PD3
-60
N.C.
N.C.
N.C.
N.C.
-70
N.C.
N.C.
V_SS
N.C.
Semiconductor Group
552