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HYM322160S Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – 2M x 32-Bit Dynamic RAM Module | |||
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2M x 32-Bit Dynamic RAM Module
HYM 322160S/GS-60/-70
Advanced Information
⢠2 097 152 words by 32-Bit organization
(alternative 4 194 304 words by 16-Bit)
⢠Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
⢠Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
⢠Single + 5 V (± 10 %) supply
⢠Low power dissipation
max. 4840 mW active (-60 version)
max. 4400 mW active (-70 version)
CMOS â 88 mW standby
TTL â 176 mW standby
⢠CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
⢠8 decoupling capacitors mounted on
substrate
⢠All inputs, outputs and clocks fully TTL
compatible
⢠72 pin double-sided Single in-Line Memory
Module with 25.4 mm (1000 mil) height
⢠Utilizes sixteen 1M à 4 DRAMs in 300 mil
SOJ packages
⢠1024 refresh cycles / 16 ms
⢠Tin-Lead contact pads (S - version)
⢠Gold contact pads (GS - version)
Ordering Information
Type
HYM 322160S-60
Ordering Code
Q67100-Q2014
Package
L-SIM-72-11
HYM 322160S-70
Q67100-Q2015 L-SIM-72-11
HYM 322160GS-60
Q67100-Q2016 L-SIM-72-11
HYM 322160GS-70
Q67100-Q2017 L-SIM-72-11
Description
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
Semiconductor Group
551
09.94
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