HYM321000S Datasheet, PDF (6/10 Pages) Siemens Semiconductor Group – 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module

HYM 321000S/GS-50/-60
1M × 32-Bit
DC Characteristics (cont’d) ¹⁾
Parameter
Symbol
Average V_CC supply current during fast
I_CC4
page mode:
HYM 321000S/GS-50
HYM 321000S/GS-60
(RAS = V_IL, CAS, address cycling
t_PC = t_PC min.)
Standby V_CC supply current
I_CC5
(RAS = CAS = V_CC – 0.2 V)
Average V_CC supply current during
I_CC6
CAS-before-RAS refresh mode:
HYM 321000S/GS-50
HYM 321000S/GS-60
(RAS, CAS cycling, t_RC = t_RC min.)
Limit Values
min.
max.
–
110
–
100
–
–
2
–
400
–
360
–
Unit Test
Condition
mA
mA
2), 3),4)
mA –
2),4)
mA
mA
Capacitance
T_A = 0 to 70 °C; V_CC = 5 V ± 10 %; f = 1 MHz
Parameter
Input capacitance (A0 to A9)
Input capacitance (RAS0, RAS2)
Input capacitance (CAS0-CAS3)
Input capacitance (WE)
I/O capacitance (DQ0-DQ31)
Symbol
C_I1
C_I2
C_I3
C_I4
C_IO1
Limit Values
min.
max.
–
25
–
20
–
20
–
25
–
15
Unit
pF
pF
pF
pF
pF
Semiconductor Group
6