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HYM321000S Datasheet, PDF (5/10 Pages) Siemens Semiconductor Group – 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module
HYM 321000S/GS-50/-60
1M × 32-Bit
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ........................................................................... – 0.5 to min (Vcc + 0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 2.52 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics 1)
TA = 0 to 70 °C; VCC = 5 V ± 10 %
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
II(L)
(0 V < VIN < 6.5 V, all other pins = 0 V)
Output leakage current
IO(L)
(DO is disabled, 0 V < VOUT < 5.5 V)
Average VCC supply current:
ICC1
HYM 321000S/GS-50
HYM 321000S/GS-60
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current
ICC2
(RAS = CAS = VIH)
Average VCC supply current during RAS
ICC3
only refresh cycles:
HYM 321000S/GS-50
HYM 321000S/GS-60
(RAS cycling, CAS = VIH , tRC = tRC min.)
Limit Values
min.
max.
2.4
5.5
– 1.0
0.8
2.4
–
–
0.4
– 10
10
– 10
10
–
400
–
360
–
–
4
–
400
–
360
–
Unit Test
Condition
V–
V–
V–
V–
µA –
µA –
mA
mA
2), 3),4)
mA –
2),4)
mA
mA
Semiconductor Group
5