HYM321000S Datasheet, PDF (1/10 Pages) Siemens Semiconductor Group – 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module

1M × 32-Bit Dynamic RAM Module
(2M × 16-Bit Dynamic RAM Module)
HYM 321000S/GS-50/-60
Advanced Information
• 1 048 576 words by 32-bit organization
(alternative 2 097 152 words by 16-bit)
• Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
• Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max 2200 mW active (-50 version)
max. 1980 mW active (-60 version)
CMOS – 11 mW standby
TTL – 22 mW standby
• CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh
• 2 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 72 pin Single in-Line Memory Module
• Utilizes two 1M × 16 -DRAMs in SOJ-42 packages
• 1024 refresh cycles/16 ms
• Optimized for use in byte-write non-parity applications
• Tin-Lead contact pads HYM 321000S
• Gold-Lead contact pads HYM 321000GS
• single sided module with 20.32 mm (800 mil) height
Semiconductor Group
1
12.95