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HYB5118160BSJ-50 Datasheet, PDF (6/24 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM | |||
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HYB 5118160BSJ-50/-60/-70
1M x 16-DRAM
DC Characteristics (contâd)
TA = 0 to 70 °C, VSS = 0 V, VCC = 5 V ± 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Average VCC supply current,
ICC4
during fast page mode: -50 ns version
â
55
-60 ns version
â
50
-70 ns version
â
45
(RAS = VIL, CAS, address cycling, tPC = tPC min.)
Standby VCC supply current
(RAS = CAS = VCC â 0.2 V)
ICC5
â
1
Average VCC supply current, during CAS-
ICC6
before-RAS refresh mode: -50 ns version
â
200
-60 ns version
â
180
-70 ns version
â
160
(RAS, CAS cycling, tRC = tRC min.)
Average Self Refresh Current
ICC7
_
1
(CBR cycle with tRAS>TRASSmin., CAS held low,
WE=Vcc-0.2V, Address and Din=Vcc--0.2V or 0.2V)
Unit Test
Condition
mA 2) 3) 4)
mA 2) 3) 4)
mA 2) 3) 4)
mA 1)
mA 2) 4)
mA 2) 4)
mA 2) 4)
mA
Capacitance
TA = 0 to 70 °C,VCC = 5 V ± 10 %, f = 1 MHz
Parameter
Symbol
Input capacitance (A0 to A9)
CI1
Input capacitance (RAS, UCAS, LCAS, WE, OE) CI2
I/O capacitance (I/O1-I/O16)
CIO
Limit Values
min.
max.
â
5
â
7
â
7
Unit
pF
pF
pF
Semiconductor Group
6
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