HYB5118160BSJ-50 Datasheet, PDF (1/24 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM

1M x 16-Bit Dynamic RAM
(1k-Refresh)
HYB5118160BSJ-50/-60/-70
Advanced Information
• 1 048 576 words by 16-bit organization
• 0 to 70 °C operating temperature
• Performance:
tRAC
tCAC
tAA
tRC
tPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
90 110 130 ns
35 40 45 ns
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 1100 active mW (-50 version)
max. 990 active mW (-60 version)
max. 880 active mW (-70 version)
11 mW standby (TTL)
5.5. mW standby (MOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh
• Fast page mode capability
• 2 CAS / 1 WE
• All inputs, outputs and clocks fully TTL-compatible
• 1024 refresh cycles / 16 ms
• Plastic Package:
P-SOJ-42-1 400 mil
Semiconductor Group
1
1.96