HYB5118160BSJ-50 Datasheet, PDF (3/24 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM

HYB 5118160BSJ-50/-60/-70
1M x 16-DRAM
Vcc
I/O1
I/O2
I/O3
I/O4
Vcc
I/O5
I/O6
I/O7
I/O8
N.C.
N.C.
WE
RAS
N.C.
N.C.
A0
A1
A2
A3
Vcc
P-SOJ-42 (400 mil)
1
42 Vss
2
41 I/O16
3
40 I/O15
4
39 I/O14
5
38 I/O13
6
37 Vss
7
36 I/O12
8
35 I/O11
9
34 I/O10
10
33 I/O9
11
32 N.C.
12
31 LCAS
13
30 UCAS
14
29 OE
15
28 A9
16
27 A8
17
26 A7
18
25 A6
19
24 A5
20
23 A4
21
22 Vss
Pin Configuration
Truth Table
RAS LCAS UCAS WE
OE
I/O1-I/O8
H
H
H
H
H
High-Z
I/O9-I/O16
High-Z
Operation
Standby
L
H
H
H
H
High-Z
High-Z
Refresh
L
L
H
H
L
Dout
High-Z
Lower byte read
L
H
L
H
L
High-Z
Dout
Upper byte read
L
L
L
H
L
Dout
Dout
Word read
L
L
H
L
H
Din
Don't care Lower byte write
L
H
L
L
H
Don't care Din
Upper byte write
L
L
L
L
H
Din
Din
Word write
L
L
L
H
H
High-Z
High-Z
NOP
Semiconductor Group
3