BFP183W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)

BFP 183W
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.65
pF
0.55
C_{cb 0.50}
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
24
V
24
V_CB
dB
G
10V
20
5V
3V
18
2V
16
14
12
1V
10
0.7V
8
0 5 10 15 20 25 30 35 mA 45
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
10.0
MHz
10V
f_T ^8.0
8V
5V
7.0
6.0
3V
5.0
2V
4.0
3.0
1V
0.7V
2.0
1.0
0.0
0 5 10 15 20 25 30 35 mA 45
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
18
dB
G
14
10V
3V
12
2V
10
8
1V
6
4
0.7V
2
0
0 5 10 15 20 25 30 35 mA 45
I_C
Semiconductor Group
6
Dec-12-1996