BFP183W Datasheet, PDF (3/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)

BFP 183W
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
max.
AC Characteristics
Transition frequency
I_C = 25 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 10 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
I_C = 5 mA, V_CE = 8 V, Z_S = Z_Sopt
f = 900 MHz
f = 1.8 GHz
Power gain ¹⁾
I_C = 15 mA, V_CE = 8 V, f = 900 MHz
Z_S = Z_Sopt, Z_L = Z_Lopt
Power gain ²⁾
I_C = 15 mA, V_CE = 8 V, f = 1.8 GHz
Z_S = Z_Sopt, Z_L = Z_Lopt
Transducer gain
I_C = 15 mA, V_CE = 8 V, Z_S =Z_L= 50 Ω
f = 900 MHz
f = 1.8 GHz
f_T
6
C_cb
-
C_ce
-
C_eb
-
F
-
-
G_ms
-
G_ma
-
|S_21e|²
-
-
8
-
0.4
0.6
0.27 -
1
-
1.2
-
2
-
21.5 -
14.5 -
17
-
11
-
1) G_ms = |S₂₁/S₁₂|
2) G_ma = |S₂₁/S₁₂| (k-(k²-1)^1/2)
Unit
GHz
pF
dB
Semiconductor Group
3
Dec-12-1996