BFP183W Datasheet, PDF (4/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)

BFP 183W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
1.0345 fA
BF =
115.98 -
VAF = 14.772 V
IKF =
0.14562 A
NE =
1.2149 -
BR = 10.016 -
VAR = 3.4276 V
IKR = 0.013483 A
NC = 0.85331 -
RB =
1.0112 Ω
RBM = 2.5426 Ω
RE =
1.3435 Ω
CJE = 23.077 fF
VJE = 1.0792 V
TF =
22.746 ps
XTF = 0.36823 -
ITF =
1.8773 mA PTF = 0
deg
VJC = 1.1967 V
MJC = 0.3
-
TR =
1.0553 ns
CJS = 0
fF
MJS = 0
-
XTB = 0
-
XTI = 3
-
FC =
0.54852 -
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
0.80799 -
16.818 fA
0.99543 -
1.3559 fA
0.43801 mA
0.20486 Ω
0.45354 -
0.50905 V
460.11 fF
0.053823 -
0.75
V
1.11
eV
300
K
Package Equivalent Circuit:
LBI =
0.43
nH
LBO = 0.47
nH
LEI =
0.26
nH
LEO = 0.12
nH
LCI =
0.06
nH
LCO = 0.36
nH
CBE = 68
fF
CCB = 46
fF
CCE = 232
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-12-1996