BFG194 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)

BFG 194
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
12
dB ^IC=70mA
10
G
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
0.9GHz
0.9GHz
1.8GHz
V
12
V_CE
V_CE = Parameter
30
I_C=70mA
dB
G
20
15
10
5
10V
2V
1V
0
0.7
-5
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
42
dBm
38
IP₃ 36
34
32
30
28
26
24
22
20
18
16
14
12
0
5V
8V
3V
2V
1V
20
40
60
80 mA 120
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
28
dB ^IC^=70mA
24
S₂₁ 22
20
18
16
14
12
10
8
6
4
2
1V
2V
0
0.7V
-2
0.0 0.5 1.0 1.5 2.0
10V
GHz 3.0
f
Semiconductor Group
6
Aug-22-1996