BFG194 Datasheet, PDF (5/7 Pages) Siemens Semiconductor Group – PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)

BFG 194
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
4.0
pF
C_cb
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
12
dB
G
8
10V
5V
3V
2V
Transition frequency f_T = f (I_C)
V_CE = Parameter
5.5
GHz
f_{T 4.5}
4.0
3.5
3.0
2.5
10V
8V
5V
3V
2V
1V
2.0
1.5 ^0.7V
1.0
0
20
40
60
80
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
mA 120
I_C
7.0
10V
dB
5V
G
5.0
3V
4.0
2V
6
1V
4
0.7V
2
0
0
20
40
60
80
mA 120
I_C
3.0
2.0
1.0
0.0
-1.0
0
1V
0.7V
20
40
60
80 mA 120
I_C
Semiconductor Group
5
Aug-22-1996