BFG194 Datasheet, PDF (2/7 Pages) Siemens Semiconductor Group – PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)

BFG 194
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO
V
I_C = 1 mA, I_B = 0
15
-
-
Collector-base cutoff current
I_CBO
nA
V_CB = 10 V, I_E = 0
-
-
100
Emitter-base cutoff current
I_EBO
µA
V_EB = 2 V, I_C = 0
-
-
1
DC current gain
h_FE
-
I_C = 70 mA, V_CE = 8 V
15
50
-
Semiconductor Group
2
Aug-22-1996