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OBTS141 Datasheet, PDF (5/10 Pages) Siemens Semiconductor Group – Smart Lowside Power Switch
Block Diagramm
Terms
I IN
1 IN
HITFET
VIN
RL
2
D
ID
3
S
VDS Vbb
Input circuit (ESD protection)
IN
ESD-ZDI
Source
ESD zener diodes are not designed
for DC current > 2 mA @ VIN>10V.
BTS 141
Inductive and overvoltage output clamp
VZ
D
S
HITFET
Short circuit behaviour
V IN
I D(SCp)
ID
I D(Lim)
t 0 tm t 1
t2
t0: Turn on into a short circuit
tm : Measurementpoint for ID(lim)
t1: Activation of the fast temperature sensor and
regulation of the drain current to a level wher
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
Semiconductor Group
Page 5
13.07.1998