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OBTS141 Datasheet, PDF (1/10 Pages) Siemens Semiconductor Group – Smart Lowside Power Switch
HITFET®BTS 141
Smart Lowside Power Switch
Features
• Logic Level Input
• Input Protection (ESD)
• Thermal Shutdown
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
VDS
RDS(on)
ID(lim)
ID(ISO)
EAS
60 V
28 mΩ
25 A
12 A
4000 mJ
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS® chip on chip tech-
nology. Fully protected by embedded protected functions.
V bb
+
LOAD
1
IN
dv/dt
limitation
Current
lim itation
Overvoltage
protection
Drain
2
ESD
Overload
protection
Over-
temperature
protection
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pprrootteeccttiioonn
Source
3
HITFET®
Semiconductor Group
Page 1
M
13.07.1998