OBTS141 Datasheet, PDF (4/10 Pages) Siemens Semiconductor Group – Smart Lowside Power Switch

Electrical Characteristics
Parameter
at T_j=25°C, unless otherwise specified
Characteristics
Initial peak short circuit current limit
V_IN = 10 V, V_DS = 12 V
Current limit ¹⁾
V_IN = 10 V, V_DS = 12 V, t_m = 350 µs,
T_j = -40...+150 °C
Dynamic Characteristics
Turn-on time V_IN to 90% I_D:
R_L = 2,2 Ω, V_IN = 0 to 10 V, V_bb = 12 V
Turn-off time V_IN to 10% I_D:
R_L = 2,2 Ω, V_IN = 10 to 0 V, V_bb = 12 V
Slew rate on
70 to 50% V_bb:
R_L = 2,2 Ω, V_IN = 0 to 10 V, V_bb = 12 V
Slew rate off
50 to 70% V_bb:
R_L = 2,2 Ω, V_IN = 10 to 0 V, V_bb = 12 V
Protection Functions
Thermal overload trip temperature
Unclamped single pulse inductive energy
I_D = 12 A, T_j = 25 °C, V_bb = 32 V
I_D = 12 A, T_j = 150 °C, V_bb = 32 V
Inverse Diode
Inverse diode forward voltage
I_F = 5*12A, t_m = 300 µs, V_IN = 0 V
BTS 141
Symbol
Values
Unit
min. typ. max.
I_D(SCp)
I_D(lim)
- 100 - A
25 35 50
t_on
-
t_off
-
-dV_DS/dt_on -
dV_DS/dt_off
-
40 100 µs
70 170
1
3 V/µs
1
3
T_jt
150 165 - °C
E_AS
mJ
4000 -
-
900 -
-
V_SD
- 1.13 - V
1_{Device switched on into existing short circuit (see diagram Determination of I D(lim). Dependant on the application, these values}
might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition
Semiconductor Group
Page 4
13.07.1998