HYM324000GD- Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – 4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE

HYM324000GD-50/-60
4M x 32 SO-DIMM
DC Characteristics (cont’d)
T_A = 0 to 70 ˚C, V_SS = 0 V, V_CC = 3 V ± 0.3 V
Parameter
Symbol Limit Values
min. max.
Average Vcc supply current,
I_CC4
during fast page mode:
-50 ns version
–
170
-60 ns version
(RAS = V_IL, CAS, address cycling: tPC=tPC min.)
–
150
Standby Vcc supply current
(RAS=CAS= Vcc-0.2V)
I_CC5
–
400
Average Vcc supply current, during CAS-before- I_CC6
RAS refresh mode:
-50 ns version
–
280
-60 ns version
–
240
(RAS, CAS cycling: tRC = tRC min.)
Self Refresh Current
I_CC7
–
400
Average Power Supply Current during Self Refresh.
(CBR cycle with tRAS>TRASSmin, CAS held low,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
Unit Note
mA 3) 4) 5)
mA
A–
mA 3) 4)
mA
A
Semiconductor Group
185