HYM324000GD- Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – 4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE

4M × 32-Bit Dynamic RAM Module
SMALL OUTLINE MEMORY MODULE
HYM 324000GD-50/-60
Preliminary Information
• 4 0194 034 words by 32-bit organization
• Fast access and cycle time
50 ns access time
95 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
• Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
• Single + 3.3 V (± 0.3 V) supply
• Low power dissipation
max. 1008 mW active (-50 version)
max. 864 mW active (-60 version)
LVCMOS – 1.8 mW standby
TTL
– 14.4 mW standby
• CAS-before-RAS refresh, RAS-only-refresh. Self Refresh
• 2 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 72 pin, dual read-out, one bank, Small Outline DIMM Module
• Utilizes two 4M × 16 -DRAMs (HYB 3165160T)
• 4096 refresh cycles / 64 ms
• Gold contact pad
Semiconductor Group
181
11.94