HYM324000GD- Datasheet, PDF (4/6 Pages) Siemens Semiconductor Group – 4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE

HYM324000GD-50/-60
4M x 32 SO-DIMM
Absolute Maximum Ratings ¹⁾
Operating temperature range..............................................................................................0 to 70 ˚C
Storage temperature range.........................................................................................– 55 to 150 ˚C
Soldering temperature.............................................................................................................260 ˚C
Soldering time..............................................................................................................................10 s
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
DC Characteristics
T_A = 0 to 70 ˚C, V_SS = 0 V, V_CC = 3 V ± 0.3 V
Parameter
Symbol Limit Values
min. max.
Input high voltage
Input low voltage
Output high voltage (LVTTL)
Output „H“ level voltage (Iout = -2mA)
V_IH
2.0
Vcc+0.3
V_IL
– 0.3 0.8
V_OH
2.4
–
Output low voltage (LVTTL)
Output „L“level voltage (Iout = +2mA)
V_OL
–
0.4
Output high voltage (LVCMOS)
Output „H“ level voltage (Iout = -100uA)
V_OH
Vcc-0.2 -
Ouput low voltage (LVCMOS)
Output „L“ level voltage (Iout = +100uA)
V_OL
-
0.2
Input leakage current,any input
(0 V < Vin < Vcc , all other pins = 0 V
I_I(L)
– 10 10
Output leakage current
(DO is disabled, 0 V < Vout < Vcc )
I_O(L)
– 10 10
Average Vcc supply current:
I_CC1
-50 ns version
–
280
-60 ns version
–
240
(RAS, CAS, address cycling: tRC = tRC min.)
Standby Vcc supply current
(RAS=CAS= Vih)
I_CC2
–
4
Average Vcc supply current, during RAS-only
I_CC3
refresh cycles:
-50 ns version
–
280
-60 ns version
–
240
(RAS cycling: CAS = VIH: tRC = tRC min.)
Unit Note
V 2)
V 2)
V
V
V 6)
V 6)
µA
µA
mA 3) 4) 5)
mA
mA –
mA 3) 5)
mA
Semiconductor Group
184